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RF Device Data
Freescale Semiconductor
MRF1513NT1
TYPICAL CHARACTERISTICS, 450 - 520 MHz
2
Pout, OUTPUT POWER (WATTS)
50
0
Eff, DRAIN EFFICIENCY (%)
30
60
40
3
1
500 MHz
520 MHz
470 MHz
Eff, DRAIN EFFICIENCY (%)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
11
10
14
Figure 5. Drain Efficiency versus Output Power
1
GAIN (dB)
0
Figure 6. Output Power versus Biasing Current
6
IDQ, BIASING CURRENT (mA)
1
Figure 7. Drain Efficiency versus
Biasing Current
70
IDQ, BIASING CURRENT (mA)
45
Figure 8. Output Power versus Supply Voltage
0
8
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
20
9151610
12 13
14
8
91011 1613 14
15
12
11
0
40
60
60
470 MHz
100 600200
300
400
500
0
5
80
2
3
12
16
50
2345
13
P
out
, OUTPUT POWER (WATTS)
200 600300
400
500
100
P
out
, OUTPUT POWER (WATTS)
65
520 MHz
55
500 MHz
1
2
Eff, DRAIN EFFICIENCY (%)
50
70
500 MHz
520 MHz
470 MHz
450 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
VDD
= 12.5 Vdc
Pin
= 20.3 dBm
Pin
= 20.3 dBm
IDQ
= 50 mA
VDD
= 12.5 Vdc
Pin
= 20.3 dBm
Pin
= 20.3 dBm
IDQ
= 50 mA
VDD
= 12.5 Vdc
15
45
20
70
VDD
= 12.5 Vdc
4
5
40
3
4
30
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